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| AP4N1R1CDT-A Parameter Specifications | | Model: | AP4N1R1CDT-A | Package: | PDFN-5X6 | Channel: | N-Channel | | VDS(V): | 45V | VGS(±V): | +20 / -12V | IDS(A): | 265A | | RDS(ON)(mΩ): | 1.15mΩ | VGS(th)(max V): | 2V | Ciss(pF): | 11600/18560pF | | Qg(nC): | 172/275nC | Brand: | APEC 富鼎 | Origin: | China Taiwan |
Trench type power MOS tube field effect tube super junction MOS tube POWER MOSFET Super Junction MOSFET brand agent Shenzhen original authentic electronic components supplier spot AP4N1R1CDT-A Parameter Specifications Data Sheet PDF Download View PDF ( Tips: Some browsers may open the file directly instead of downloading. This requires you to use the right-click menu “Save Target As...” at the download location. ) 
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